NTLJS3113PT1G onsemi MOSFET P-Ch 20V 9.5A 6-WDFN

NTLJS3113PT1G onsemi Transistor MOSFET P-CH 20V 5.8A 6-Pin WDFN EP T/R RoHS

SKU: NTLJS3113PT1G Category: Tag: Brand:

Description

NTLJS3113PT1G onsemi MOSFET P-Channel 20 V 3.5A 700mW Surface Mount 6-WDFN RoHS

Specifications
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: WDFN-6
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 5.8 A
Rds On – Drain-Source Resistance: 90 mOhms
Vgs – Gate-Source Voltage: – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 670 mV
Qg – Gate Charge: 13 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.9 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 56.5 ns
Forward Transconductance – Min: 5.9 S
Height: 0.75 mm
Length: 2 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Rise Time: 17.5 ns
Series: NTLJS3113P
Reel:3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 6.9 ns
Width: 2 mm
Unit Weight: 0.000317 oz
Manufacturer:ON Semiconductor
Datasheet:on-semi/NTLJS3113P.pdf

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