NXP BC847BW,115 BJT Transistor, GP, NPN, 45V, 200 mW, 100 mA SOT-23

Description

NXP BC847BW,115 Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 200 mW, 100 mA, 200
Manufacturer: NXP
Product Category: Bipolar Transistors – BJT
RoHS: RoHS Compliant Details
Brand: NXP Semiconductors
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 45 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 0.1 A
Gain Bandwidth Product fT: 100 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-323
DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V
DC Current Gain hFE Max: 200 at 2 mA at 5 V
Minimum Operating Temperature: – 65 C
Packaging: Reel
Pd – Power Dissipation: 200 mW
Factory Pack Quantity: 3000
Part # Aliases: BC847BW T/R

Manufacturer:NXP
Datasheet:NXP/BC847BW.pdf