NXP PDTC115EE,115 Bipolar (BJT) Single Transistor, BRT, NPN, 50 V, 150 mW, 100 mA

NXP, PDTC115EE,115 NPN Digital Transistor, 20 mA 50 V 100 k?, Ratio Of 1, 3-Pin SOT-416

SKU: PDTC115EE115 Categories: , , Tag: Brand:

Description

PDTC115EE,115 NXP Semiconductors Transistor Digit al BJT NPN 50V 20mA 3-Pin SMPAK T/R RoHS Manufacturer: NXP

Digital Transistors, NXP

Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

Specifications

Transistor Type NPN
Maximum Continuous Collector Current 20 mA
Maximum Collector Emitter Voltage 50 V
Maximum Emitter Base Voltage 10 V
Typical Input Resistor 100 kO
Typical Resistor Ratio 1
Maximum Collector Emitter Saturation Voltage 0.15 V
Mounting Type Surface Mount
Package Type SOT-416
Pin Count 3
Minimum DC Current Gain 80
Maximum Power Dissipation 150 mW
Number of Elements per Chip 1
Width 0.9mm
Configuration Single
Height 0.85mm
Dimensions 1.8 x 0.9 x 0.85mm
Length 1.8mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Manufacturer:NXP
Datasheet:Others/PDTC115E_SERIES.pdf

Additional information

Weight 0.1 lbs

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