Description
ON Semiconductor MTB75N03HDLPower MOSFET 75 Amps, 25 Volts, Logic Level. N?Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- High Density Power Fet N-channel
- Drain-Source Breakdown Voltage: 25V
- Gate-Source Breakdown Voltage: 15V
- Continuous Drain Current: 75A
- Resistance Drain-Source RDS (on): 9 mOhms
- SMD/SMT
- Case D2PAK
Manufacturer:ON Semiconductor
Datasheet:Others/MTB75N03HDL-D.PDF
