Description
PBSS5230T,215 Nexperia Bipolar (BJT) Single Transistor, PNP, 30 V, 2 A, 300mW Surface Mount SOT-23 RoHS
Technical Attributes
Channel Type P
Lead Finish Tin
Max Processing Temp 260
Maximum Base Emitter Saturation Voltage 1.1@50mA@2A V
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.35@200mA@2A V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 480 mW
Minimum DC Current Gain 300@100mA@2V
Mounting Surface Mount
MSL Level MSL 1 – Unlimited
Operating Temperature -65 to 150C
Pin Count 3
Product Dimensions 3 x 1.4 x 1 mm
Supplier Package TO-236AB
Type PNP
Manufacturer: NXP
MFG Part #: PBSS5230T,215
