Description
Samsung SSP4N60A Power Field-Effect Transistor 4A, 600V, 2.5ohm, N-CHANNEL, Si, MOSFET, TO-220
Type Designator: SSP4N60
Type of SSP4N60 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 75
Maximum drain-source voltage |Uds|, V: 600
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 4
Maximum junction temperature (Tj), °C: 150
Rise Time of SSP4N60 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm:
Package: TO220
Manufacturer:Samsung
Datasheet:SAMSD008-438.pdf
