Description
SAMSUNG SSP6N60A N-Channel 6 Amp 600V MOSFET Metal-oxide Semiconductor FET, TO-220AB
Part Number = SSP6N60A
Manufacturer Name = Samsung Semiconductor
Average Price = 5.00
Description = N-Channel Enhancement MOSFET
V(BR)DSS (V) = 600
V(BR)GSS (V) = 20
I(D) Abs. Drain Current (A) = 6.0
I(D) Abs. Max.(A) Drain Curr. = 4.0
@Temp (°C) (Test Condition) = 100
I(DM) Max (A)(@25°C) = 24
Absolute Max. Power Diss. (W) = 125
Thermal Resistance Junc-Amb. = 80
V(GS)th Max. (V) = 4.5
V(GS)th Min. (V) = 2.0
@(VDS) (V) (Test Condition) = 20
@I(D) (A) (Test Condition) = 250u
I(DSS) Max. (A) = 250u
@V(DS) (V) (Test Condition) = 550
@Temp (°C) (Test Condition) = 25
I(GSS) Max. (A) = 100n
@V(GS) (V) (Test Condition) = 20
r(DS)on Max. (Ohms) = 1.2
@V(GS) (V) (Test Condition) = 10
@I(D) (A) (Test Condition) = 3.0
g(fs) Min. (S) Trans. conduct. = 3.0
g(fs) Max, (S) Trans. conduct, = 4.8
@V(DS) (V) (Test Condition) = 50
@I(D) (A) (Test Condition) = 3.0
C(iss) Max. (F) = 1.8n
@V(DS) (V) (Test Condition) = 25
@Freq. (Hz) (Test Condition) = 1.0M
td(on) Max (s) On time delay = 60n
t(r) Max. (s) Rise time = 150n
t(d)off Max. (s) Off time = 200n
t(f) Max. (s) Fall time. = 120n
Package = TO-220var
Military = N
Manufacturer:Samsung
Datasheet:Samsung/SAMSD008-448.pdf
