Description
SBC847BPDW1T1G On Semiconductor Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW SOT-363 RoHS
Specifications
Manufacturer: onsemi
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Transistor Polarity: NPN, PNP
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 6 V, – 5 V
Collector-Emitter Saturation Voltage: 0.6 V, – 0.65 V
Pd – Power Dissipation: 380 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Series: BC847BP
Packaging: Cut Tape
Packaging: Reel
Technology: Si
Brand: onsemi
Continuous Collector Current: 0.1 A
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.000265 oz
Manufacturer: ON Semiconductor
MFG Part #: SBC847BPDW1T1G
