Description
Vishay Intertechnologies SI4435DDY-T1-GE3 Transistor 30V 8.1A 8-Pin Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet – SOIC-8
^Manufacturer: Vishay
^Product Category: MOSFET
^RoHS: RoHS Compliant By Exemption Details
^Brand: Vishay Semiconductors
^Id – Continuous Drain Current: 8.1 A
^Vds – Drain-Source Breakdown Voltage: – 30 V
^Rds On – Drain-Source Resistance: 24 mOhms
^Transistor Polarity: P-Channel
^Vgs – Gate-Source Breakdown Voltage: 20 V
^Maximum Operating Temperature: + 150 C
^Pd – Power Dissipation: 2.5 W
^Mounting Style: SMD/SMT
^Package / Case: SOIC-Narrow-8
^Packaging: Reel
^Channel Mode: Enhancement
^Configuration: Single
^Fall Time: 12 ns, 16 ns
^Minimum Operating Temperature: – 55 C
^Rise Time: 8 ns, 35 ns
^Series: SI4435DDY
^Factory Pack Quantity: 2500
^Typical Turn-Off Delay Time: 45 ns, 40 ns
^Typical Turn-On Delay Time: 10 ns, 42 ns
^Part # Aliases: SI4435DDY-GE3
Manufacturer Part Number: SI4435DDY-T1-GE3
Manufacturer: Vishay
