SI7135DP-T1-GE3 Vishay MOSFET P-Ch 30V 31.6A 8-PowerPAK

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SI7135DP-T1-GE3 Vishay Trans MOSFET P-Channel 30 V 60A 6.25W 104W Surface Mount PowerPAK SOIC-8 RoHS

SKU: SI7135DP-T1-GE3 Category: Tag: Brand:

Description

SI7135DP-T1-GE3 Vishay Siliconix Transistor MOSFET P-CH 30V 31.6A 8-Pin PowerPAK SO EP T/R RoHS

Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 60 A
Rds On – Drain-Source Resistance: 3.9 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 167 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 104 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 30 ns
Forward Transconductance – Min: 95 S
Height: 1.04 mm
Length: 6.15 mm
Product Type: MOSFET
Rise Time: 15 ns
Series: SI7
Pack Quantity:3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 25 ns
Width: 5.15 mm
Part # Aliases: SI7135DP-GE3
Unit Weight: 0.017870 oz
Manufacturer: VARTA
MFG Part #: SI7135DP-T1-GE3

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