Description
SMBT3906 Infineon Technologies TRANSISTOR, PNP SOT-23 Power Dissipation Pd:330mW; DC Collector Current:0.2A; DC Current Gain hFE:100; Pins:3; Current Ic @ Vce Sat:50mA; hFE:10mA; Max Current Gain Hfe:300; Max Current Ic:0.2A Power Dissipation:330mW; Pulsed Current Icm:200mA; SMD Marking:2A; Type:Bipolar; Voltage Vcbo:40V RoHS
Specifications
Manufacturer: Infineon
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 10 mA
Pd – Power Dissipation: 330 mW
Gain Bandwidth Product fT: 250 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Brand: Infineon Technologies
Continuous Collector Current: 10 mA
Height: 1 mm
Length: 2.9 mm
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 1.3 mm
Unit Weight: 0.050717 oz
Manufacturer: Infineon Technologies
MFG Part #: SMBT3906
