Description
SPI20N60C3 Infineon N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO262-3-1
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-262-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 20.7 A
Rds On – Drain-Source Resistance: 190 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 87 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 208 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Height: 9.45 mm
Length: 10.2 mm
Series: CoolMOS C3
Transistor Type: 1 N-Channel
Width: 4.5 mm
Brand: Infineon Technologies
Fall Time: 6.4 ns
Product Type: MOSFET
Rise Time: 15 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 59 ns
Typical Turn-On Delay Time: 12 ns
Part # Aliases: SP000014453 SPI20N60C3HKSA1 SPI2N6C3XK SPI20N60C3
Unit Weight: 0.084199 oz
Manufacturer:Electronic Components
Datasheet:Infineon/SPP_I_A20N60C3-DS-v03_02-EN.pdf
