Description
SPI21N50C3 Infineon MOSFET N-Channel 560V 21A (Tc) 208W (Tc) Through Hole
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-262-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 500 V
Id – Continuous Drain Current: 21 A
Rds On – Drain-Source Resistance: 190 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 95 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 208 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Height: 9.45 mm
Length: 10.2 mm
Series: CoolMOS C3
Transistor Type: 1 N-Channel
Width: 4.5 mm
Brand: Infineon Technologies
Fall Time: 4.5 ns
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 67 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: SP000014463 SPI21N50C3HKSA1 SPI21N5C3XK
Unit Weight: 0.084199 oz
Manufacturer Part Number: SPI21N50C3
Manufacturer: Infineon Technologies
