Description
SSM3J375F,LF Toshiba MOSFET P-Channel 20V 2A 600mW Surface Mount S-Mini RoHS
Specifications
Manufacturer:Toshiba
Product Category:MOSFET
Technology:Si
Mounting Style:SMD/SMT
Package / Case:S-Mini-3
Transistor Polarity:P-Channel
Number of Channels:1 Channel
Vds – Drain-Source Breakdown Voltage:20 V
Id – Continuous Drain Current:2 A
Rds On – Drain-Source Resistance:150 mOhms
Vgs – Gate-Source Voltage:- 8 V, + 6 V
Vgs th – Gate-Source Threshold Voltage:1 V
Qg – Gate Charge:4.6 nC
Maximum Operating Temperature:+ 150 C
Pd – Power Dissipation:1.2 W
Channel Mode:Enhancement
Qualification:AEC-Q101
Tradename:U-MOSVI
Packaging:Cut Tape
Packaging:Reel
Configuration:Single
Series:SSM3J375F
Transistor Type:1 P-Channel
Brand:Toshiba
Forward Transconductance – Min:2.2 S
Product Type:MOSFET
Factory Pack Quantity:3000
Subcategory:MOSFETs
Typical Turn-Off Delay Time:43 ns
Typical Turn-On Delay Time:17 ns
Manufacturer:Toshiba
Datasheet:SSM3J375F_datasheet.pdf
