Description
ST13003-K STMicroelectronics High Voltage Transistor GP BJT NPN 400V 1.5A 3-Pin(3+Tab) SOT-32
Specifications
Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors – BJT
RoHS: Details
Mounting Style: SMD/SMT
Package / Case: SOT-32-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 1.5 A
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: 500V to 1000V Transistors
DC Current Gain hFE Max: 8
Height: 10.8 mm (Max)
Length: 7.8 mm (Max)
Packaging: Bulk
Width: 2.7 mm (Max)
Brand: STMicroelectronics
DC Collector/Base Gain hfe Min: 8
Pd – Power Dissipation: 40000 mW
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 500
Subcategory: Transistors
Unit Weight: 0.021164 oz
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Manufacturer Part Number: ST13003-K
Manufacturer: STMicroelectronics
