STD3NK60ZT4 STMicroelectronics N-Channel 600V 3.6 Ohm SuperMESH Power MosFet TO-252

STD3NK60ZT4 Trans MOSFET N-CH 600V 2.4A Surface Mount 3-Pin (2+Tab) DPAK T/R RoHS

SKU: STD3NK60ZT4 Categories: , , Tags: , Brand:

Description

STD3NK60ZT4 STMicroelectronics MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH 3-Pin (2+Tab) DPAK T/R RoHS
Specifications

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 2.4 A
Rds On – Drain-Source Resistance: 3.6 Ohms
Vgs – Gate-Source Voltage: 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 45 W
Channel Mode: Enhancement
Height: 2.4 mm
Length: 6.6 mm
Series: STB3NK60Z
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 6.2 mm
Brand: STMicroelectronics
Forward Transconductance – Min: 1.8 S
Fall Time: 14 ns
Product Type: MOSFET
Rise Time: 14 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 9 ns
Unit Weight: 0.139332 oz
The STD3NK60ZT4 is a N-Channel Zener-Protected SuperMESH™Power MOSFET.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in a DPAK Package.

Features:

Typical RDS(on) = 3.3 Ω
100% avalanche tested
Extremely high dv/dt capability
Very low intrinsic capacitance
Very good manufacturing repeatibility
Applications:

High current, high speed switching
Ideal for off-line power supplies, adaptors and PFC
Lighting

Manufacturer Part Number: STD3NK60ZT4
Manufacturer: STMicroelectronics

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