Description
STF15NM65N STMicroelectronics Second generation MDmesh Power MOSFET N Channel, 650 V, 12 A, 0.35 ohm, TO-220FP, Through Hole RoHS
Specifications
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 650 V
Id – Continuous Drain Current: 15.5 A
Rds On – Drain-Source Resistance: 270 mOhms
Vgs – Gate-Source Voltage: – 25 V, + 25 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 33.3 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 35 W
Channel Mode: Enhancement
Tradename: MDmesh
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 26 ns
Product Type: MOSFET
Rise Time: 8 ns
Series: STF15NM65N
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 25 ns
Unit Weight: 0.068784 oz
Manufacturer: STMicroelectronics
MFG Part #: STF15NM65N
