Description
STB9NB60-1 STB9NB60 N-CHANNEL 600V – 0.7ohm – 9A – I2PAK/D2PAK PowerMESH MOSFET
Part STB9NB60-1
Category Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Medium Voltage
Title Medium Voltage
Description N-channel 600V -0.7 Ohm – 9A – I2PAK/D2PAK Powermesh MOSFET
Company ST Microelectronics, Inc.
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
Manufacturer:STMicroelectronics
Datasheet:STMicro/STB9NB60.pdf
