STMicroelectronics 2N3440 Bipolar (BJT) Single Transistor, NPN, 250 V, 15 MHz, 1 W, 1 A

2N3440 Bipolar Transistors – BJT NPN Power Switching 1000mA, 250V

Description

2N3440 STMicroelectronics, Inc. Transistors 1000mA, 250V, NPN, Si, SMALL SIGNAL , TO-39

The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

Product Specifications

  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 250V
  • Transition Frequency ft 15MHz
  • Power Dissipation Pd 1W
  • DC Collector Current 1A
  • DC Current Gain hFE 160
  • Transistor Case Style TO-39
  • No. of Pins 3Pins
  • Operating Temperature Max 200°C

Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors – BJT
RoHS: RoHS Compliant Details
Brand: STMicroelectronics
Mounting Style: Through Hole
Package / Case: TO-39
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 300 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1 A
Gain Bandwidth Product fT: 15 MHz
Maximum Operating Temperature: + 200 C
Series: 2N3440
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 40
DC Current Gain hFE Max: 160
Minimum Operating Temperature: – 65 C
Packaging: Bulk
Pd – Power Dissipation: 10000 mW
Manufacturer:STMicroelectronics
Datasheet:SGSTS36642-1.pdf

Additional information

Weight 0.1 lbs

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