Description
STMicroelectronics IRF830 N-Channel MOSFET Transistor 500V 4.5A 100W TO-220
Package 3TO-220
Channel Mode Enhancement
Maximum Drain Source Voltage 500 V
Maximum Continuous Drain Current 4.5 A
RDS-on 1500@10V mOhm
Maximum Gate Source Voltage ±20 V
Typical Turn-On Delay Time 11.5 ns
Typical Rise Time 8 ns
Typical Fall Time 5 ns
Operating Temperature -65 to 150 °C
Mounting Through Hole
Category MOSFET
Manufacturer STMicroelectronics
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources
Id – Continuous Drain Current: 4.5 A
Vds – Drain-Source Breakdown Voltage: 500 V
Rds On – Drain-Source Resistance: 1.5 Ohms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 16 ns
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 74 W
Rise Time: 16 ns
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 8.2 ns
Manufacturer:STMicroelectronics
Datasheet:IRF830.pdf
