Description
STMicroelectronics IRFZ40 N-CHANNEL ENHANCEMENT MOSFET TRANSISTOR 50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFZ40 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry
Specifications
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: No
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 28 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 175 C
Packaging: Tube
Channel Mode: Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 25 ns
Minimum Operating Temperature: – 65 C
Pd – Power Dissipation: 150 W
Rise Time: 110 ns
Series: IRFZ40
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Unit Weight: 0.011640 oz
Manufacturer:STMicroelectronics
Datasheet:Others/SGSTS20261-1.pdf
