Description
STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC’s superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST’s silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations, and other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4- to 12-amp, through-hole and SMD package offer. The second generation, with a 6A, 1200V device (COMING SOON), and a 650V series are also available.
Manufacturer:STMicroelectronics
Datasheet:STPSC4H065D.pdf
