Description
STMicroelectronics STW9NB80 Transistor MOSFET N-CH 800V 9.3A 3-Pin TO-247
Specifications
N-channel 900V – 0.85 Ohm – 9.3A – TO-247 Powermesh MOSFET
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: No
Mounting Style: Through Hole
Package / Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 800 V
Id – Continuous Drain Current: 9 A
Rds On – Drain-Source Resistance: 1 Ohms
Vgs – Gate-Source Voltage: 30 V
Maximum Operating Temperature: + 150 C
Technology: Si
Packaging: Tube
Channel Mode: Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 22 ns
Minimum Operating Temperature: – 65 C
Pd – Power Dissipation: 190 W
Rise Time: 20 ns
Series: STW9NB80
Factory Pack Quantity: 30
Transistor Type: 1 N-Channel
Typical Turn-On Delay Time: 28 ns
Unit Weight: 1.340411 oz
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Manufacturer:STMicroelectronics
Datasheet:STW9NB80.pdf
