Description
STP100N10F7 STMicroelectronics MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150 3-Pin(3+Tab) TO-220AB Tube RoHS
Specifications
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 80 A
Rds On – Drain-Source Resistance: 8 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 56 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Tradename: STripFET
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 16 ns
Product: Power MOSFETs
Product Type: MOSFET
Rise Time: 40 ns
Series: STP100N10F7
Reel:1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 27 ns
Unit Weight: 0.068784 oz
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Manufacturer:STMicroelectronics
Datasheet:en.DM00066568[1].pdf
