Description
STP33N60M2 STMicroelectronics Single N-Channel 650 V 0.125 O 190 W Flange Mount Power Mosfet – TO-220-3
Specifications
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 26 A
Rds On – Drain-Source Resistance: 108 mOhms
Vgs th – Gate-Source Threshold Voltage: 3 V
Vgs – Gate-Source Voltage: 25 V
Qg – Gate Charge: 45.5 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Packaging: Tube
Series: MDmesh M2
Transistor Type: 1 N-Channel
Brand: STMicroelectronics
Fall Time: 9 ns
Pd – Power Dissipation: 190 W
Rise Time: 9.6 ns
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 109 ns
Typical Turn-On Delay Time: 16 ns
Unit Weight: 0.011640 oz
Manufacturer Part Number: STP33N60M2
Manufacturer: STMicroelectronics
