Description
TK10A60E,S4X Toshiba Mosfet N-Channel 600V 10A 45W 750mOhm Through Hole TO-220SIS Lead free / RoHS: Compliant
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600V
Current – Continuous Drain (Id) at 25C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) at Id, Vgs:750mOhm at 5A, 10V
Vgs(th) (Max) at Id:4V at 1mA
Gate Charge (Qg) (Max) at Vgs:40nC at 10V
Vgs (Max):30V
Input Capacitance (Ciss) (Max) at Vds:1300pF at 25V
Power Dissipation (Max):45W (Tc)
Operating Temperature:150C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
Manufacturer Part Number: TK10A60E,S4X
Manufacturer: Toshiba
