Description
TK42A12N1,S4X(S Toshiba N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-220SIS^
Specifications
Channel Type N
Maximum Continuous Drain Current 42 A
Maximum Drain Source Voltage 120 V
Maximum Drain Source Resistance 9.4 mohm
Maximum Gate Threshold Voltage 4V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220SIS
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 35 W
Length 10mm
Dimensions 10 x 4.5 x 15mm
Width 4.5mm
Number of Elements per Chip 1
Transistor Material Si
Typical Turn-On Delay Time 40 ns
Typical Gate Charge at Vgs 52 nC at 10 V
Typical Input Capacitance at Vds 3100 pF at 60 V
Typical Turn-Off Delay Time 64 ns
Series TK
Height 15mm
Maximum Operating Temperature +150 C
Manufacturer Part Number: TK42A12N1,S4X(S
Manufacturer: Toshiba
