Description
Toshiba 2SC2235Y NPN Silicon Transistor 120V 0.8A TO-92 Through HoleType Designator: 2SC2235Y
Type of Transistor:BJT
Type Designator:2SC2235Y
Material of Transistor:Si
Polarity:NPN
Maximum Collector Power Dissipation:0.9 W
Maximum Collector-Base Voltage:120 V
Maximum Collector-Emitter Voltage:120 V
Maximum Emitter-Base Voltage:5 V
Maximum Collector Current:0.8 A
Maximum Operating Junction Temperature:150 °C
Transition Frequency:60 MHz
Forward Current Transfer Ratio (hFE Value):120
Collector Capacitance:30 pF
Package:TO92
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF: 30
Forward current transfer ratio (hFE), min: 120
Package of 2SC2235Y transistor: TO92
Manufacturer:Toshiba
Datasheet:2sc2235.pdf
