Description
TPN11003NL,LQ(S Toshiba MOSFET N-Channel 30 V 11A 700mW 19W Surface Mount 8-TSON Advance RoHS
Specifications
Manufacturer: Toshiba
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 31 A
Rds On – Drain-Source Resistance: 12.6 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.3 V
Qg – Gate Charge: 7.5 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 19 W
Channel Mode: Enhancement
Tradename: U-MOSVIII-H
Packaging: Reel
Packaging: Cut Tape
Brand: Toshiba
Configuration: Single
Fall Time: 1.9 ns
Height: 0.85 mm
Length: 3.1 mm
Product Type: MOSFET
Rise Time: 2.1 ns
Series: TPN11003NL
Pack Quantity:3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 7.5 ns
Width: 3.1 mm
Unit Weight: 0.000705 oz
Manufacturer:Toshiba
Datasheet:Toshiba/TPN11003NL.pdf
