Description
Vishay IRF830A N-Channel MOSFET Transistor 500V 5.0 Amp
Manufacturer: Vishay
Product Category: MOSFET
RoHS: No
Brand: Vishay Semiconductors
Id – Continuous Drain Current: 5 A
Vds – Drain-Source Breakdown Voltage: 500 V
Rds On – Drain-Source Resistance: 1.4 Ohms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 30 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 74 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 15 ns
Minimum Operating Temperature: – 55 C
Rise Time: 21 ns
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 10 ns
Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
Manufacturer:Vishay
Datasheet:IRF830A.pdf
