Description
ZVP2110A Diodes Inc Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole RoHS
The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 😯 resistance and 700mW power dissipation.
Applications
Power Management, Motor Drive & Control, Audio, Automotive
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 230 mA
Rds On – Drain-Source Resistance: 8 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.5 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 700 mW
Channel Mode: Enhancement
Packaging: Bulk
Configuration: Single
Height: 4.01 mm
Length: 4.77 mm
Product: MOSFET Small Signal
Series: ZVP2110
Transistor Type: 1 P-Channel
Type: FET
Width: 2.41 mm
Brand: Diodes Incorporated
Forward Transconductance – Min: 125 mS
Fall Time: 15 ns
Product Type: MOSFET
Rise Time: 15 ns
Factory Pack Quantity: 4000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 7 ns
Unit Weight: 0.016000 oz
Manufacturer: Diodes Inc.
MFG Part #: ZVP2110A
