Description
SECOS BC639-16 TRANSISTOR, NPN, 80V, 1A, TO-92-3, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:80V, Transition Frequency ft:200MHz, Power Dissipation Pd:800mW, DC Collector Current:1A, DC Current Gain hFE:100, Transistor Case , RoHS
SPECIFICATIONS
BC639-16 Transistor
Type Designator: BC639-16
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 7
Forward current transfer ratio (hFE), min: 100
Package of BC639-16 transistor: TO-92
Manufacturer Part Number: BC639-16
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