Description
This is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.
Features
30A, 50V
RDS(ON)= 0.040Ω
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Specifications
Lifecycle: Obsolete
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 30 A
Rds On – Drain-Source Resistance: 40 mOhms
Vgs – Gate-Source Voltage: 20 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 75 W
Channel Mode: Enhancement
Height: 16.3 mm
Length: 10.67 mm
Series: BUZ11
Transistor Type: 1 N-Channel
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Fall Time: 130 ns
Rise Time: 70 ns
Typical Turn-Off Delay Time: 180 ns
Typical Turn-On Delay Time: 30 ns
Unit Weight: 0.063493 oz
Manufacturer Part Number: BUZ11-FSC
Fairchild Semiconductor
