Description
FAIRCHILD SEMICONDUCTOR FDN359AN MOSFET Transistor, N Channel, 2.7 A, 30 V, 46 mohm, 10 V, 1.6 V
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Very fast switching
- Low gate charge
Applications
Specifications
Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: RoHS Compliant
Mounting Style: SMD/SMT
Package / Case: SSOT-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 2.7 A
Rds On – Drain-Source Resistance: 37 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Reel
Channel Mode: Enhancement
Brand: Fairchild Semiconductor
Configuration: Single
Fall Time: 13 ns
Forward Transconductance – Min: 9.5 S
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 500 mW
Rise Time: 13 ns
Series: FDN359
Factory Pack Quantity: 3000
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: FDN359AN_NL
Unit Weight: 0.001058 oz
Manufacturer:Fairchild Semiconductor
Datasheet:Fairchild/FDN359AN.pdf
