Description
Fairchild Semiconductor FDN337N N-Channel 2.2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
The FDN337N from Fairchild is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.
High density cell design for extremely low Rds(on)
Exceptional on resistance and maximum DC current capability
Drain to source voltage (Vds) of 30V
Gate to source voltage of ±8V
Low on state resistance of 65mohm at Vgs 4.5V
Continuous drain current of 2.2A
Maximum power dissipation of 500mW
Operating junction temperature range from -55°C to 150°C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Product Attributes
Categories Discrete Semiconductor Products
Transistors – FETs, MOSFETs – Single
Manufacturer Fairchild/ON Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Vgs (Max) ±8V
Power Dissipation (Max) 500mW (Ta)
Rds On (Max) @ Id, Vgs 65 mOhm @ 2.2A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT-3
Package / Case TO-236-3, SC-59, SOT-23-3
Manufacturer Part Number: FDN337N
Manufacturer: Fairchild Semiconductor
