Description
FQP2N40_F080, By Fairchild Semiconductor , Transistor MOSFET N-CH 400V 1.8A 3-Pin TO-220 Tube
Description
Maximum Drain Source Voltage 400 V
Channel Mode Enhancement
Lead Finish Matte Tin
Typical Rise Time 30 ns
Channel Type N
Maximum Continuous Drain Current 1.8 A
Maximum Gate Source Voltage ±30 V
Screening Level Military
Typical Turn-Off Delay Time 7 ns
Mounting Through Hole
Typical Fall Time 25 ns
RDS-on 5.8@10V Ohm
Operating Temperature -55 to 150 °C
Typical Turn-On Delay Time 7 ns
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer:Fairchild Semiconductor
Datasheet:FQP2N40.pdf
