Description
FQU2N60CTU Fairchild Semiconductor N-Channel 600 V 4.7 Ohm Through Hole Power Mosfet – IPAK-3
Specifications
Product Category: MOSFET
Manufacturer: ON Semiconductor
RoHS: RoHS Compliant By Exemption
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-251-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 1.9 A
Rds On – Drain-Source Resistance: 4.7 Ohms
Vgs – Gate-Source Voltage: 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Channel Mode: Enhancement
Packaging: Tube
Brand: ON Semiconductor / Fairchild
Fall Time: 28 ns
Forward Transconductance – Min: 5 S
Height: 6.3 mm
Length: 6.8 mm
Pd – Power Dissipation: 2.5 W
Rise Time: 25 ns
Series: FQU2N60C
Factory Pack Quantity: 70
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 9 ns
Width: 2.5 mm
Unit Weight: 0.012102 oz
This N-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Part Number: FQU2N60CTU
Manufacturer: Fairchild Semiconductor
