NDS351AN Fairchild N-Channel MOSFET 30V 1.2A SMD SOT-23

NDS351AN Fairchild N-Channel MOSFET 30V 1.2A SMD SOT-23

FAIRCHILD SEMICONDUCTOR NDS351AN MOSFET Transistor, N Channel, 1.2 A, 30 V, 0.092 ohm, 10 V, 2.1 V

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SKU: NDS351AN Categories: , , Tag: Brand:

Description

NDS351AN Fairchild N-Channel MOSFET 30V 1.2A SMT / SMD SOT-23 RoHS

MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):250mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.1V, Power Dissipation Pd:500mW
Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: RoHS Compliant Details
Id – Continuous Drain Current: 1.4 A
Vds – Drain-Source Breakdown Voltage: 30 V
Rds On – Drain-Source Resistance: 92 mOhms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 500 mW
Mounting Style: SMD/SMT
Package / Case: SSOT-3
Packaging: Reel
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Configuration: Single
Fall Time: 8 ns
Minimum Operating Temperature: – 55 C
Rise Time: 8 ns
Series: NDS351
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 3 ns
Part # Aliases: NDS351AN_NL
Unit Weight: 0.001058 oz

The NDS351AN is an N-channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is particularly suited for low voltage where fast switching and low in-line power loss are needed in a very small outline surface mount package.
  • Ultra-Low gate charge
  • High performance trench technology for extremely low RDS (ON)

Manufacturer:Fairchild Semiconductor
Datasheet:Fairchild/NDS351AN.pdf

Additional information

Weight 0.001 lbs

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