Description
1N5819 ON Semiconductor 1N5819 Schottky RECTIFIER, 1A, 40V, DO-41, Diode Type:Schottky, Diode Configuration:Single, Repetitive Reverse Voltage Vrrm Max:40V, Forward Current If(AV):1A, Forward Voltage VF Max:850mV, Reverse Recovery Time trr Max:-, No. of Pins:2 , RoHS
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Manufacturer:ON Semiconductor
Datasheet:476.pdf
